APTM120DA15G詳細規(guī)格
- 類別:FET
- 描述:MOSFET N-CH 1200V 60A SP6
- 系列:-
- 制造商:Microsemi Power Products Group
- FET型:MOSFET N 通道,金屬氧化物
- FET特點:標準
- 漏極至源極電壓333Vdss444:1200V(1.2kV)
- 電流_連續(xù)漏極333Id4440a025000C:60A
- 開態(tài)Rds(最大)0a0IdwwwwVgs0a025000C:175 毫歐 @ 30A,10V
- Id時的Vgs333th444(最大):5V @ 10mA
- 閘電荷333Qg4440a0Vgs:748nC @ 10V
- 輸入電容333Ciss4440a0Vds:20600pF @ 25V
- 功率_最大:1250W
- 安裝類型:底座安裝
- 封裝/外殼:SP6
- 供應商設備封裝:SP6
- 包裝:散裝
- FET Microsemi Power Products Group SOT-227-4,miniBLOC MOSFET N-CH 1200V 19A SOT-227
- 數(shù)據(jù)采集 - 模數(shù)轉(zhuǎn)換器 Texas Instruments 28-SOIC(0.295",7.50mm 寬) IC ADC 12BIT 117KHZ 28-SOIC
- FET Microsemi Power Products Group SP6 MOSFET N-CH 100V 570A SP6
- 陶瓷 AVX Corporation 0606(1616 公制) CAP CER 180PF 50V 5% 0606
- 薄膜 EPCOS Inc 徑向 CAP FILM 0.15UF 440VAC RADIAL
- 陶瓷 EPCOS Inc 徑向 CAP CER 0.018UF 100V 10% RADIAL
- 二極管,整流器 - 陣列 Vishay Semiconductors TO-263-3,D²Pak(2 引線+接片),TO-263AB DIODE SCHOTTKY 45V 20A D2PAK
- Card Edge, Edgeboard Connectors Sullins Connector Solutions TO-263-3,D²Pak(2 引線+接片),TO-263AB CONN EDGECARD 14POS .100 DIP SLD
- IGBT Microsemi Power Products Group ISOTOP IGBT 600V 283A 682W SOT227
- 薄膜 EPCOS Inc 徑向 CAP FILM 0.15UF 440VAC RADIAL
- 陶瓷 AVX Corporation 0606(1616 公制) CAP CER 390PF 50V 5% 0606
- 陶瓷 EPCOS Inc 徑向 CAP CER 0.022UF 100V 10% RADIAL
- 單二極管/整流器 Vishay Semiconductors TO-247-2 DIODE FAST REC 600V 40A TO247AC
- Card Edge, Edgeboard Connectors Sullins Connector Solutions TO-247-2 CONN EDGECARD 14POS DIP .100 SLD
- 數(shù)據(jù)采集 - 模數(shù)轉(zhuǎn)換器 Texas Instruments 24-CDIP(0.300",7.62mm) IC 12-BIT 333KHZ SMPL A/D 24-DIP