ASML lithography: 目前世界上最先進(jìn)的光刻機(jī)
發(fā)布時間:2008/6/5 0:00:00 訪問次數(shù):962
twinscan™ xt:1700i
the xt:1700i with hydrolith immersion technology delivers the world’s first 1.2 hyper na for high-volume manufacturing at the 45-nm node. this innovative lithography system leverages twinscan dual stages and an advanced, in-line catadioptric lens to deliver unrivalled resolution, depth of focus, overlay and productivity at an industry-leading 122 wafers per hour.
this fourth generation asml immersion system provides a low-risk path to immersion techniques that improve yield and device performance. in fact, asml immersion systems are already up and running on three continents, and to date, two leading manufacturers have announced first silicon using asml’s hydrolith technology. the xt:1700i puts you at the forefront of developments that will take optical lithography to 45 nm.
lens field size overlay throughput
na resolution x & y 2 pt. global
alignment 300 mm wafers
125 exp., 30 mj/cm2
1.2 < 50 nm 26 x 33 mm < 7 nm > 122 wph
twinscan™ xt:1700i
the xt:1700i with hydrolith immersion technology delivers the world’s first 1.2 hyper na for high-volume manufacturing at the 45-nm node. this innovative lithography system leverages twinscan dual stages and an advanced, in-line catadioptric lens to deliver unrivalled resolution, depth of focus, overlay and productivity at an industry-leading 122 wafers per hour.
this fourth generation asml immersion system provides a low-risk path to immersion techniques that improve yield and device performance. in fact, asml immersion systems are already up and running on three continents, and to date, two leading manufacturers have announced first silicon using asml’s hydrolith technology. the xt:1700i puts you at the forefront of developments that will take optical lithography to 45 nm.
lens field size overlay throughput
na resolution x & y 2 pt. global
alignment 300 mm wafers
125 exp., 30 mj/cm2
1.2 < 50 nm 26 x 33 mm < 7 nm > 122 wph
熱門點擊
- 彩電屢燒行管的幾點問題討論
- 納米技術(shù)材料
- 測試硬件簡介---探針卡(prober ca
- 什么是載流子遷移率及遷移率影響芯片的那些性能
- 新型低介電常數(shù)材料研究進(jìn)展
- 如何快速提高產(chǎn)品良率
- 用calibre做LVL的兩種簡單方法
- 真空斷路器的合閘彈跳與分閘彈振研究
- 晶體學(xué)基礎(chǔ)
- 光子晶體的結(jié)構(gòu)及分類
推薦技術(shù)資料
- 羅盤誤差及補(bǔ)償
- 造成羅盤誤差的主要因素有傳感器誤差、其他磁材料干擾等。... [詳細(xì)]
- 電源管理 IC (PMIC)&
- I2C 接口和 PmBUS 以及 OTP/M
- MOSFET 和柵極驅(qū)動器單
- 數(shù)字恒定導(dǎo)通時間控制模式(CO
- Power Management Buck/
- 反激變換器傳導(dǎo)和輻射電磁干擾分析和抑制技術(shù)
- 多媒體協(xié)處理器SM501在嵌入式系統(tǒng)中的應(yīng)用
- 基于IEEE802.11b的EPA溫度變送器
- QUICCEngine新引擎推動IP網(wǎng)絡(luò)革新
- SoC面世八年后的產(chǎn)業(yè)機(jī)遇
- MPC8xx系列處理器的嵌入式系統(tǒng)電源設(shè)計
- dsPIC及其在交流變頻調(diào)速中的應(yīng)用研究