SiC單晶生長
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growth of bulk sic 劉喆 徐現(xiàn)剛 摘 要：本文綜述了國際上sic單晶生長的發(fā)展歷史及現(xiàn)狀.從其結構特點生長方法的選擇,生長過程中的問題以及存在的晶體缺陷等方面進行了介紹. |
基金項目：國家杰出青年科學基金資助項日(60025409)和863資助項日(2001aa31108).
作者簡介：劉喆(1978-),女,碩士研究生,從事sic晶體生長的研究.
作者單位：劉喆（山東大學晶體材料國家重點實驗室,山東,濟南,250100）
徐現(xiàn)剛（山東大學晶體材料國家重點實驗室,山東,濟南,250100）參考文獻：
［1］w.f. knippenberg, growth phenomena in silicon carbide
. philips research reports, 1963,18:16～274.
［2］j.a. lely,ber. dent. keram..ges,1955,28:229.
［3］yu. m. tairov, v. f. tsvetkov. investigation of growth processes of ingots of silicon carbide single crystals. journal of crystal growth, 1978,43:209～212.
［4］yu. m. tairov, v. f. tsvetkov. general principles of growing largesize single crystals of various silicon carbide polytypes.. journal of crystal growth, 1981,52: 146～150.
［5］dieter h. hofman, matthias h. muller. prospects of the use liquid phase techniques for the growth of bulk silicon carbide crystals..mater. sci. and eng. b, 1999,61～62: 29～39.
［6］g. ziegler, p. lanig, dietmar theis, claus weyrich. single crystal growth of sic substrate material for blue light emitting diodes..ieee trans. electron. devices ed, 1983,30(4): 277.
［7］m. muller, m. bickermann, d. hofmann, a. d . weber, a. winnack-er. studies on sic liquid phase crystallization as technique for sicbulk growth. mater. sci. forum, 1998,264～268:69～72.
［8］r. yakimova, e. janzen. current states and advances in the growth of sic. diamond and related materials, 2000,9: 432～438.
［9］g. augustine, h. mcd. hobgood, v. balakrishna, g. dunne, r. h.hopkins. physical vapor transport growth and properties of sic monocrystals of 4h polytype. phys. stat. sol. (b), 1997,202:137～148.
［10］d. schulz, g. wagner, j. dolle, k. irmscher, t. muller , h. j. rost,d. siche, j. wollweber. impurity incorporation during sublimationgrowth of 6h bulk sic.. journal of crystal grwoth, 1999, 198/199:1024～1027.
［11］yu. m. tairov. growth of bulk sic. mater. sci. and eng. b.,1999,61～62:83～89.
［12］r. yakimova, m. syvajarvi, m. tuominen, t. iakimov, p. raback, a.vehanen, e. janze-n. seed sublimation growth of 6h and 4h-sic crystals. mater. sci. and eng. b, 1999,61-62: 54-57.
［13］m.s. ramm, e. n. mokhov, et al. optimization of sublimation growth of sic bulk crystals using modeling. mater. sci. and eng. b.,1999,61～62: 107～112.
［14］i.a. zhmakin, a. v. kulik, yu, karpov, s. e. demina, m. s. ramm,yu. n. makarov. evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide. diamond and related mater. 2000,9: 446～451.
［15］d. schulz, g. wagned et al. influence of excess silicon on the surface morphology and defect structure during the initial stages of sic sublimation grwoth. mater. sci. and eng. b, 1999,61～62: 86～88.
［16］yu. a. vodakov, a. d. roenk
sic單晶生長
growth of bulk sic
劉喆 徐現(xiàn)剛
摘 要：本文綜述了國際上sic單晶生長的發(fā)展歷史及現(xiàn)狀.從其結構特點生長方法的選擇,生長過程中的問題以及存在的晶體缺陷等方面進行了介紹.
關鍵詞：碳化硅;單晶生長;寬禁帶半導體
分類號：o782.7 文獻標識碼：a
文章編號：1004-793x(2003)02-0274-05
基金項目：國家杰出青年科學基金資助項日(60025409)和863資助項日(2001aa31108).
作者簡介：劉喆(1978-),女,碩士研究生,從事sic晶體生長的研究.
作者單位：劉喆（山東大學晶體材料國家重點實驗室,山東,濟南,250100）
徐現(xiàn)剛（山東大學晶體材料國家重點實驗室,山東,濟南,250100）參考文獻：
［1］w.f. knippenberg, growth phenomena in silicon carbide
. philips research reports, 1963,18:16～274.
［2］j.a. lely,ber. dent. keram..ges,1955,28:229.
［3］yu. m. tairov, v. f. tsvetkov. investigation of growth processes of ingots of silicon carbide single crystals. journal of crystal growth, 1978,43:209～212.
［4］yu. m. tairov, v. f. tsvetkov. general principles of growing largesize single crystals of various silicon carbide polytypes.. journal of crystal growth, 1981,52: 146～150.
［5］dieter h. hofman, matthias h. muller. prospects of the use liquid phase techniques for the growth of bulk silicon carbide crystals..mater. sci. and eng. b, 1999,61～62: 29～39.
［6］g. ziegler, p. lanig, dietmar theis, claus weyrich. single crystal growth of sic substrate material for blue light emitting diodes..ieee trans. electron. devices ed, 1983,30(4): 277.
［7］m. muller, m. bickermann, d. hofmann, a. d . weber, a. winnack-er. studies on sic liquid phase crystallization as technique for sicbulk growth. mater. sci. forum, 1998,264～268:69～72.
［8］r. yakimova, e. janzen. current states and advances in the growth of sic. diamond and related materials, 2000,9: 432～438.
［9］g. augustine, h. mcd. hobgood, v. balakrishna, g. dunne, r. h.hopkins. physical vapor transport growth and properties of sic monocrystals of 4h polytype. phys. stat. sol. (b), 1997,202:137～148.
［10］d. schulz, g. wagner, j. dolle, k. irmscher, t. muller , h. j. rost,d. siche, j. wollweber. impurity incorporation during sublimationgrowth of 6h bulk sic.. journal of crystal grwoth, 1999, 198/199:1024～1027.
［11］yu. m. tairov. growth of bulk sic. mater. sci. and eng. b.,1999,61～62:83～89.
［12］r. yakimova, m. syvajarvi, m. tuominen, t. iakimov, p. raback, a.vehanen, e. janze-n. seed sublimation growth of 6h and 4h-sic crystals. mater. sci. and eng. b, 1999,61-62: 54-57.
［13］m.s. ramm, e. n. mokhov, et al. optimization of sublimation growth of sic bulk crystals using modeling. mater. sci. and eng. b.,1999,61～62: 107～112.
［14］i.a. zhmakin, a. v. kulik, yu, karpov, s. e. demina, m. s. ramm,yu. n. makarov. evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide. diamond and related mater. 2000,9: 446～451.
［15］d. schulz, g. wagned et al. influence of excess silicon on the surface morphology and defect structure during the initial stages of sic sublimation grwoth. mater. sci. and eng. b, 1999,61～62: 86～88.
［16］yu. a. vodakov, a. d. roenk
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